B. Smith

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

P.R. Chidambaram, B. Smith, Lindsey Hall et al. · 2004 · 89 citations

Device Modeling, Electrical Engineering, Nm Gate Length +12

7.1 A 2.69pJ/b 212Gb/s DSP-Based PAM-4 Transceiver for Optical Direct-Detect Application in 5nm FinFET

J. Q. Wang, A. Tan, Ashwin K. Iyer et al. · 2024 · 23 citations

An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

R. Khamankar, H. Bu, C. Bowen et al. · 2004 · 21 citations

Engineering, Vlsi Design, Class Performance +19

A versatile 0.13 μm CMOS platform technology supporting high performance and low power applications

A.H. Perera, B. Smith, N. Cave et al. · 2002 · 18 citations

Low Power Applications, Engineering, Vlsi Design +17