H. Bu

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

P.R. Chidambaram, B. Smith, Lindsey Hall et al. · 2004 · 89 citations

Device Modeling, Electrical Engineering, Nm Gate Length +12

On the defect structure due to low energy ion bombardment of graphite

D. Marton, H. Bu, Kevin J. Boyd et al. · Surface Science · 1995 · 72 citations

Materials Science, Graphene Nanomeshes, Ion Implantation +7

Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

B. C. Hendrix, A. S. Borovik, Chen Xu et al. · Applied Physics Letters · 2002 · 65 citations

Engineering, Hafnium Silicate, Hf1−xsixo2 Films +16

Advanced CMOS transistors with a novel HfSiON gate dielectric

Antonio Rotondaro, M. R. Visokay, James J. Chambers et al. · 2003 · 60 citations

Materials Science, Poly Si, Electrical Engineering +13

GPUMD 4.0: A high‐performance molecular dynamics package for versatile materials simulations with machine‐learned potentials

Ke Xu, H. Bu, Shuning Pan et al. · Materials Genome Engineering Advances · 2025 · 38 citations · Full text