Statistics
Publications
49
Citations
3.2K
H-Index
30
Active since
1990
James J. Chambers is an author at Texas Instruments (United States) specializing in materials science, natural sciences, and semiconductor materials.
Publications per year
1990–2024
49
49
Effect of nitrogen on band alignment in HfSiON gate dielectrics
Şafak Sayan, Nhan V. Nguyen, James R. Ehrstein et al. · Applied Physics Letters · 2005 · 456 citations
Application of HfSiON as a gate dielectric material
M. R. Visokay, James J. Chambers, Antonio Rotondaro et al. · Applied Physics Letters · 2002 · 377 citations
Natural Sciences, Materials Engineering, Materials Science +17
Extracellular pectin-RALF phase separation mediates FERONIA global signaling function
Ming‐Che Liu, Fang‐Ling Yeh, Robert Yvon et al. · Cell · 2023 · 142 citations
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