James J. Chambers

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Şafak Sayan, Nhan V. Nguyen, James R. Ehrstein et al. · Applied Physics Letters · 2005 · 456 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +15

Application of HfSiON as a gate dielectric material

M. R. Visokay, James J. Chambers, Antonio Rotondaro et al. · Applied Physics Letters · 2002 · 377 citations

Engineering, Standard Metal–oxide–semiconductor Flow, Thin Film Process Technology +17

Epithelial integrin alpha 6 beta 4: complete primary structure of alpha 6 and variant forms of beta 4.

Richard N. Tamura, Carla Rozzo, Lisa Starr et al. · The Journal of Cell Biology · 1990 · 318 citations · Full text

Developmental Biology, Signal Transduction, Alpha 6 +15

Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon

James J. Chambers, Gregory N. Parsons · Journal of Applied Physics · 2001 · 189 citations

Materials Science, Electrical Engineering, Engineering +14

Extracellular pectin-RALF phase separation mediates FERONIA global signaling function

Ming‐Che Liu, Fang‐Ling Yeh, Robert Yvon et al. · Cell · 2023 · 118 citations

Signal Transduction, Intercellular Communication, Biological Function +3