Applied Physics Letters · 2005 · 456 citations · 7 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesBand AlignmentBand GapBand OffsetsBarrier HeightsComplementary Metal-oxide-semiconductor DevicesConduction BandGate DielectricsSpectroscopic Ellipsometry
Nitridation of HfSiO films improves certain physical and electrical properties—when using gate stack layers—such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K-edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50eV±0.05eV, and the valence- and conduction-band offsets by 1.2eV±0.1eV and 0.33eV±0.05eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.
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Application of HfSiON as a gate dielectric material
M. R. Visokay, James J. Chambers, Antonio Rotondaro et al. · Applied Physics Letters · 2002 · 377 citations
Natural Sciences, Materials Engineering, Materials Science +17