Concepedia

Gate Dielectrics

Gate Dielectrics is an insulating material layer in a field-effect transistor that separates the gate electrode from the semiconductor channel, enabling the control of charge carriers in the channel through an applied electric field while minimizing gate leakage current, particularly critical in wide-bandgap semiconductor devices for high-power and high-temperature operation.

3.5K

Publications

174.6K

Citations

11.6K

Authors

1.4K

Institutions

Publications per year

2017–2026

621

Variants

Gate Insulators

Parents

Publications

3.5K

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

, , +17

High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts

Hui Fang, Steven S.C. Chuang, Ting Chia Chang et al. · Nano Letters · 2012 · 1.8K citations · Full text

, , +17

Double-Gate Tunnel FET With High- Gate Dielectric

Kathy Boucart, Adrian Ionescu · IEEE Transactions on Electron Devices · 2007 · 1.7K citations · Full text

, , +15

Alternative dielectrics to silicon dioxide for memory and logic devices

Angus I. Kingon, Jon‐Paul Maria, S. K. Streiffer · Nature · 2000 · 1.3K citations

, , +14

Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

A. Facchetti, Myung‐Han Yoon, T.J. Marks · Advanced Materials · 2005 · 1K citations

, , +17

1–5 of 3.5K

Authors

11.6K

  1. DK
    Dim‐Lee Kwong

    Institute of Microelectronics, Singapore

    53 publications · 2K citations

    28

    h-index

  2. RC
    Rino Choi

    Inha University, South Korea

    42 publications · 2.1K citations

    27

    h-index

  3. GG
    G. Groeseneken

    IMEC, Belgium

    41 publications · 2.2K citations

    25

    h-index

  4. EP
    E. P. Gusev

    IBM Research - Thomas J. Watson Research Center, United States

    30 publications · 2.8K citations

    25

    h-index

  5. GL
    G. Lucovsky

    North Carolina State University, United States

    36 publications · 1.8K citations

    24

    h-index

1–5 of 11.6K

Institutions

1.4K

  1. The University of Texas at Austin

    Austin, United States

    46 h-index

    739 publications

    31.8K citations

  2. IMEC

    Leuven, Belgium

    45 h-index

    797 publications

    34.1K citations

  3. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    39 h-index

    306 publications

    27.7K citations

  4. IBM (United States)

    Armonk, United States

    39 h-index

    464 publications

    24.8K citations

  5. Stanford University

    Stanford, United States

    38 h-index

    246 publications

    39.5K citations

  6. Chinese Academy of Sciences

    Beijing, China

    37 h-index

    429 publications

    18.9K citations

  7. North Carolina State University

    Raleigh, United States

    35 h-index

    309 publications

    14.5K citations

  8. KU Leuven

    Leuven, Belgium

    33 h-index

    173 publications

    8.2K citations

1–8 of 1.4K

Venues

  1. Applied Physics Letters

    499 publications · 29.2K citations

    87

    h-index

  2. IEEE Electron Device Letters

    315 publications · 16.1K citations

    68

    h-index

  3. IEEE Transactions on Electron Devices

    258 publications · 13.3K citations

    57

    h-index

  4. Journal of Applied Physics

    176 publications · 18.2K citations

    53

    h-index

  5. ACS Applied Materials & Interfaces

    67 publications · 3K citations

    35

    h-index

1–5