Robert M. Wallace - Concepedia

Author

Robert M. Wallace

Also Known As

D. Sandor, R M Wallace, R Wallace, R. M. Wallace, R. W. Wallace, R. Wallace, R.M Wallace, R.M. WALLACE, R.M. Wallace, R. M. Wallace

611

Publications

46K

Citations

H-Index

185

Concepts

All Affiliations

The University of Texas at Dallas Texas Instruments (United States)Pennsylvania State University University of North Texas

About

Robert M. Wallace is an author at The University of Texas at Dallas specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	79	270	32.9K
2	Education	3	3	89
3	Health Sciences	2	2	64
4	Humanities	2	2	170
5	Arts	1	1	88

Robert M. Wallace

330

Publications

44.1K

Citations

H-Index

Page 1

	Year	Citations
Carbon-Based Supercapacitors Produced by Activation of Graphene Yanwu Zhu, Shanthi Murali, Meryl D. Stoller, Science	2011	6K
High-κ gate dielectrics: Current status and materials properties considerations G. D. Wilk, Robert M. Wallace, J. Anthony Journal of Applied Physics EngineeringBand GapSemiconductor DeviceSemiconductorsMaterials Science	2001	5.8K
Near-unity photoluminescence quantum yield in MoS <sub>2</sub> Matin Amani, Der‐Hsien Lien, Daisuke Kiriya, Science Optical MaterialsEngineeringTwo-dimensional MaterialsTransition Metal DichalcogenidesOptoelectronic Devices	2015	1.2K
Hafnium and zirconium silicates for advanced gate dielectrics G. D. Wilk, Robert M. Wallace, J. Anthony Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringElectronic Materials	2000	971
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 Adam Pirkle, Jack Chan, A. Venugopal, Applied Physics Letters EngineeringChemistryElectrical PropertiesGraphene NanomeshesChemical Engineering	2011	965
The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy Geunsik Lee, Cecilia Mattevi, Adam Pirkle, The Journal of Physical Chemistry C EngineeringThermal ReductionGraphene ExfoliationChemistryGraphene Nanomeshes	2011	922
Defect-Dominated Doping and Contact Resistance in MoS<sub>2</sub> Stephen McDonnell, Rafik Addou, Creighton Buie, ACS Nano Materials ScienceTransition Metal ChalcogenidesDefect-dominated DopingEngineeringPhysics	2014	786
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Cheng Gong, Hengji Zhang, Weihua Wang, Applied Physics Letters EngineeringVertical StackingTunneling MicroscopyTfet ApplicationsNanoelectronics	2013	774
Two-dimensional gallium nitride realized via graphene encapsulation Zakaria Y. Al Balushi, Ke Wang, R. Ghosh, Nature Materials Materials ScienceGraphene NanomeshesEngineeringApplied PhysicsGraphene	2016	771
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS<sub>2</sub> Interfaces Cheng Gong, Luigi Colombo, Robert M. Wallace, Nano Letters	2014	765

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