2003 · 60 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDielectricsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesGate Dielectric EngineeringGate DielectricsGate Leakage CurrentGate Oxide LeakageGate OxidesHigh-k DielectricsInterface Trap DensityLeakage Current
We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO/sub 2/, low interfacial trap density, electron and hole carrier mobilities /spl sim/80% of the universal curve at E/sub eff/>0.8 MV/cm and scalability to equivalent oxide thicknesses of less than 10 /spl Aring/. This material is also thermally stable up to 1100/spl deg/C in contact with poly Si, and exhibits boron blocking significantly better than SiO/sub 2/ and SiON. The results indicate that this material is a promising high-k gate dielectric with good transistor characteristics.
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