Gudjón Gudjónsson

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjón Gudjónsson, Halldór Ólafsson, Fredrik Allerstam et al. · IEEE Electron Device Letters · 2005 · 55 citations

Semiconductor Technology, Electrical Engineering, 4H-sic Mosfets +9

High field effect mobility in Si face 4H-SiC MOSFET transistors

Halldór Ólafsson, Gudjón Gudjónsson, P. Anders Nilsson et al. · Electronics Letters · 2004 · 31 citations

Materials Engineering, Electrical Engineering, Engineering +11

High Channel Mobility 4H-SiC MOSFETs

E.Ö. Sveinbjörnsson, Gudjón Gudjónsson, Fredrik Allerstam et al. · Materials science forum · 2006 · 22 citations

Materials Science, Sintered Alumina, Electrical Engineering +11

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjón Gudjónsson, H.Ö. Ólafsson et al. · Semiconductor Science and Technology · 2007 · 22 citations

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldór Ólafsson, Gudjón Gudjónsson, Fredrik Allerstam et al. · Electronics Letters · 2005 · 12 citations

Semiconductor Technology, Room Temperature, Electrical Engineering +10