Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Abstract

Stable operation of normally-off high mobility 4H-SiC MOSFET transistors from room temperature up to 150°C is reported. The output current in saturation is decreased by about 20% at 150°C as compared to room temperature. This small decrease in current with temperature is attributed to a decrease in the field effect mobility due to phonon scattering.