High field effect mobility in Si face 4H-SiC MOSFET transistors

Abstract

A report is made on field effect mobility of 150 cm2/Vs in lateral n-channel Si face 4H-SiC MOSFETs made by gate oxidation in N2O ambient. The high mobility is correlated with a two orders of magnitude reduction in density of interface states near the SiC conduction band edge when compared to gate oxides made in a wet or dry oxygen ambient.