T. Rödle

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Vincent Desmaris, M. Rudziński, Niklas Rorsman et al. · IEEE Transactions on Electron Devices · 2006 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjón Gudjónsson, Halldór Ólafsson, Fredrik Allerstam et al. · IEEE Electron Device Letters · 2005 · 55 citations

Semiconductor Technology, Electrical Engineering, 4H-sic Mosfets +9

Ion-beam-induced amorphization of 6H-SiC

W. Bolse, J. Conrad, T. Rödle et al. · Surface and Coatings Technology · 1995 · 41 citations

Materials Engineering, Ion-beam-induced Amorphization, Ion Implantation +4

High field effect mobility in Si face 4H-SiC MOSFET transistors

Halldór Ólafsson, Gudjón Gudjónsson, P. Anders Nilsson et al. · Electronics Letters · 2004 · 31 citations

Materials Engineering, Electrical Engineering, Engineering +11

Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling

J. Conrad, T. Rödle, Thomas Weber et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 30 citations

Materials Science, Surface Profiling, Surface Characterization +7