M. Rudziński

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Vincent Desmaris, M. Rudziński, Niklas Rorsman et al. · IEEE Transactions on Electron Devices · 2006 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD

M. Rudziński, Vincent Desmaris, Paul A. van Hal et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 29 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Investigations of GaN surface quantum well in AlGaN∕GaN transistor heterostructures by contactless electroreflectance spectroscopy

M. Motyka, M. Syperek, R. Kudrawiec et al. · Applied Physics Letters · 2006 · 18 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

M. Motyka, R. Kudrawiec, M. Syperek et al. · Thin Solid Films · 2007 · 18 citations

Wide-bandgap Semiconductor, Contactless Electroreflectance Spectroscopy, Engineering +8

Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures

R. Kudrawiec, M. Syperek, J. Misiewicz et al. · Applied Physics Letters · 2005 · 15 citations · Full text

Wide-bandgap Semiconductor, Engineering, Excitation Energy Transfer +17