M. Rudziński - Concepedia

Author

M. Rudziński

Radboud University Nijmegen

Also Known As

M Rudzinski, M. RUDZIŃSKI, M. Rudzinski, M. Rudziński, Marius Rudzinski

Publications

220

Citations

H-Index

Concepts

All Affiliations

Radboud University Nijmegen Philips (Netherlands)Institute of Physics Wrocław University of Science and Technology Chalmers University of Technology

About

M. Rudziński is an author at Radboud University Nijmegen specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	171
2	Applied Physics	6	6	171
3	Electrical Engineering	5	5	153
4	Materials Engineering	2	2	43
5	Materials Science	2	2	43

M. Rudziński

Publications

194

Citations

H-Index

Page 1

	Year	Citations
Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers Vincent Desmaris, M. Rudziński, Niklas Rorsman, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringMicrowave PerformanceRf Semiconductor	2006	77
Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD M. Rudziński, Vincent Desmaris, Paul A. van Hal, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorFe Precursor	2006	29
Investigations of GaN surface quantum well in AlGaN∕GaN transistor heterostructures by contactless electroreflectance spectroscopy M. Motyka, M. Syperek, R. Kudrawiec, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringContactless Electroreflectance SpectroscopyEngineering	2006	18
Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas M. Motyka, R. Kudrawiec, M. Syperek, Thin Solid Films Wide-bandgap SemiconductorContactless Electroreflectance SpectroscopyEngineeringDimensional Electron GasPhysics	2007	18
Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures R. Kudrawiec, M. Syperek, J. Misiewicz, Applied Physics Letters Wide-bandgap SemiconductorEngineeringExcitation Energy TransferElectronic StructureBelow-bandgap Photoreflectance	2005	15
Influence of the misorientation of 4H‐SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers M. Rudziński, P.R. Hageman, A. Grzegorczyk, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceMaterials EngineeringElectrical Engineering4H-sic SubstratesEngineering	2005	14
Indium rich InGaN solar cells grown by MOCVD Hülya Çakmak, Engin Arslan, M. Rudziński, Journal of Materials Science Materials in Electronics	2014	13
MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain Jori Lemettinen, Christoffer Kauppinen, M. Rudziński, Semiconductor Science and Technology	2017	10

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