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Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

Wide-bandgap SemiconductorContactless Electroreflectance SpectroscopyEngineeringDimensional Electron GasPhysicsSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorAlgan/gan Heterostructures