P.R. Hageman

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Filip Tuomisto, K. Saarinen, B. Łucznik et al. · Applied Physics Letters · 2005 · 110 citations · Full text

Wide-bandgap Semiconductor, Gan Bulk Crystals, Semiconductor Technology +14

Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

A. van Geelen, P.R. Hageman, G.J. Bauhuis et al. · Materials Science and Engineering B · 1997 · 95 citations

Electrical Engineering, Epitaxial Growth, Engineering +7

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

J.L. Weyher, Paul D. Brown, A. Zauner et al. · Journal of Crystal Growth · 1999 · 92 citations

Materials Science, Materials Engineering, Structural Characteristics +9

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Vincent Desmaris, M. Rudziński, Niklas Rorsman et al. · IEEE Transactions on Electron Devices · 2006 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

A. Zauner, J.L. Weyher, Marco Plomp et al. · Journal of Crystal Growth · 2000 · 71 citations

Materials Science, Wide-bandgap Semiconductor, Single Crystals +11