Applied Physics Letters · 2005 · 112 citations · 19 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDefects In Electronic MaterialsIii-v SemiconductorsSemiconductor DefectsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium NitrideHydride Vapor Phase EpitaxyImpuritiesImpurity IncorporationPoint DefectsSecondary Ion Mass SpectrometryVacanciesVacancy Clusters
We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.
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Observation of Native Ga Vacancies in GaN by Positron Annihilation
K. Saarinen, T. Laine, S. Kuisma et al. · Physical Review Letters · 1997 · 495 citations
Vacancy Defects as Compensating Centers in Mg-Doped GaN
S. Hautakangas, J. Oila, M. Alatalo et al. · Physical Review Letters · 2003 · 136 citations