Filip Tuomisto

Evidence of the Zn Vacancy Acting as the Dominant Acceptor in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type ZnO

Filip Tuomisto, V. Ranki, K. Saarinen et al. · Physical Review Letters · 2003 · 457 citations · Full text

Introduction and recovery of point defects in electron-irradiated ZnO

Filip Tuomisto, K. Saarinen, D. C. Look et al. · Physical Review B · 2005 · 315 citations · Full text

Materials Science, Point Defects, Engineering +9

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

D. C. Look, Kevin Leedy, Lasse Vines et al. · Physical Review B · 2011 · 192 citations · Full text

Point Defects, Engineering, Semiconductors +17

Electrical compensation by Ga vacancies in Ga2O3 thin films

E. Korhonen, Filip Tuomisto, D. Gogova et al. · Applied Physics Letters · 2015 · 191 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

Knut Erik Knutsen, Augustinas Galeckas, A. Zubiaga et al. · Physical Review B · 2012 · 160 citations · Full text

Engineering, Positron Annihilation Spectroscopy, Ii-vi Semiconductor +16