Lasse Vines

Iron and intrinsic deep level states in Ga2O3

M. E. Ingebrigtsen, Joel B. Varley, Andrej Kuznetsov et al. · Applied Physics Letters · 2018 · 267 citations · Full text

Transition Metal Chalcogenides, Intrinsic Origin, Engineering +13

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

M. E. Ingebrigtsen, Andrej Kuznetsov, B. G. Svensson et al. · APL Materials · 2018 · 215 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

D. C. Look, Kevin Leedy, Lasse Vines et al. · Physical Review B · 2011 · 192 citations · Full text

Point Defects, Engineering, Semiconductors +17

Self-trapped hole and impurity-related broad luminescence in <i>β</i>-Ga2O3

Ymir Kalmann Frodason, K. M. Johansen, Lasse Vines et al. · Journal of Applied Physics · 2020 · 147 citations · Full text

Optical Materials, Engineering, Impurity-related Broad Luminescence +20

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Marianne Etzelmüller Bathen, Augustinas Galeckas, Johanna Müting et al. · npj Quantum Information · 2019 · 96 citations · Full text

Quantum Photonics, Engineering, Semiconductor Device +18