Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Abstract

Abstract Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ( $${V}_{{\rm{Si}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>Si</mml:mi></mml:mrow></mml:msub></mml:math> ) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from $${V}_{{\rm{Si}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>Si</mml:mi></mml:mrow></mml:msub></mml:math> defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost $$50 \%$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>50</mml:mn><mml:mi>%</mml:mi></mml:mrow></mml:math> via application of external bias. Furthermore, we identify charge state transitions of $${V}_{{\rm{Si}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>Si</mml:mi></mml:mrow></mml:msub></mml:math> by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of $${V}_{{\rm{Si}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>Si</mml:mi></mml:mrow></mml:msub></mml:math> at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, $${V}_{{\rm{Si}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>Si</mml:mi></mml:mrow></mml:msub></mml:math> defect ensembles in 4H-SiC highly suitable for quantum applications.