Hussein M. Ayedh

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Marianne Etzelmüller Bathen, Augustinas Galeckas, Johanna Müting et al. · npj Quantum Information · 2019 · 96 citations · Full text

Quantum Photonics, Engineering, Semiconductor Device +18

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

Hussein M. Ayedh, Roberta Nipoti, Anders Hallén et al. · Applied Physics Letters · 2015 · 72 citations

Engineering, Thermodynamic Equilibrium Conditions, Integrated Circuits +16

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Hussein M. Ayedh, Viktor Bobal, Roberta Nipoti et al. · Journal of Applied Physics · 2014 · 66 citations · Full text

Materials Engineering, Semiconductors, Materials Science +14

Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment

Marianne Etzelmüller Bathen, J. Coutinho, Hussein M. Ayedh et al. · Physical review. B./Physical review. B · 2019 · 38 citations · Full text

Materials Science, Materials Engineering, Semiconductors +15

Defects related to electrical doping of 4H-SiC by ion implantation

Roberta Nipoti, Hussein M. Ayedh, B. G. Svensson · Materials Science in Semiconductor Processing · 2017 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +5