B. G. Svensson

Epitaxial silicon devices for dosimetry applications

M. Bruzzi, M. Bucciolini, M. Casati et al. · Applied Physics Letters · 2007 · 236 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Divacancy acceptor levels in ion-irradiated silicon

B. G. Svensson, B. Mohadjeri, Anders Hallén et al. · Physical review. B, Condensed matter · 1991 · 186 citations

Engineering, Materials Science, Electronic Materials +14

Low-loss compact Butler matrix for a microstrip antenna

Michele Bona, Lars Manholm, J.P. Starski et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 185 citations

Engineering, Electrical Engineering, Antennas +16

Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire

Jan Linnros, B. G. Svensson, G. Holmén · Physical review. B, Condensed matter · 1984 · 144 citations

Engineering, Materials Engineering, Materials Science +17

Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

Giovanni Alfieri, Edouard V. Monakhov, B. G. Svensson et al. · Journal of Applied Physics · 2005 · 124 citations

Natural Sciences, Materials Science, Physics +17