B. Mohadjeri

Divacancy acceptor levels in ion-irradiated silicon

B. G. Svensson, B. Mohadjeri, Anders Hallén et al. · Physical review. B, Condensed matter · 1991 · 183 citations

Semiconductors, Semiconductor Technology, Ion Implantation +12

Gettering of nickel to cavities in silicon introduced by hydrogen implantation

B. Mohadjeri, J. S. Williams, J. Wong‐Leung · Applied Physics Letters · 1995 · 68 citations

Materials Science, Materials Engineering, Hydrogen Implantation +15

A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Jan Grahn, Hans Fosshaug, M. Jargelius et al. · Solid-State Electronics · 2000 · 23 citations

Electrical Engineering, Engineering, Electronic Engineering +5

Nickel-enhanced solid-phase epitaxial regrowth of amorphous silicon

B. Mohadjeri, Jan Linnros, Bengt Svensson et al. · Physical Review Letters · 1992 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber

B. Mohadjeri, Mikhaı̈l R. Baklanov, Eiichi Kondoh et al. · Journal of Applied Physics · 1998 · 16 citations

Engineering, Ellipsometric Characteristics, Silicon On Insulator +18