Edouard V. Monakhov

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

R. Vidya, Helmer Fjellvåg, Bengt Svensson et al. · Physical Review B · 2011 · 184 citations · Full text

Engineering, Computational Chemistry, Chemistry +20

Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

Giovanni Alfieri, Edouard V. Monakhov, B. G. Svensson et al. · Journal of Applied Physics · 2005 · 123 citations

Engineering, Silicon Carbide, Defect Tolerance +16

Zinc oxide: bulk growth, role of hydrogen and Schottky diodes

Edouard V. Monakhov, A Yu Kuznetsov, Bengt Svensson · Journal of Physics D Applied Physics · 2009 · 83 citations

Materials Science, Hydrothermal Samples, Electrical Engineering +11

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

R. Schifano, Edouard V. Monakhov, Bengt Svensson · Applied Physics Letters · 2007 · 74 citations · Full text

Materials Science, Grown Zno, Electrical Engineering +13

Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon

M. Mikelsen, Edouard V. Monakhov, Giovanni Alfieri et al. · Physical Review B · 2005 · 69 citations

Oxygen-enriched High-purity Silicon, Engineering, Divacancy-oxygen Formation +18