Giovanni Alfieri

Iron and intrinsic deep level states in Ga2O3

M. E. Ingebrigtsen, Joel B. Varley, Andrej Kuznetsov et al. · Applied Physics Letters · 2018 · 267 citations · Full text

Transition Metal Chalcogenides, Intrinsic Origin, Engineering +13

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

M. E. Ingebrigtsen, Andrej Kuznetsov, B. G. Svensson et al. · APL Materials · 2018 · 215 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

Giovanni Alfieri, Edouard V. Monakhov, B. G. Svensson et al. · Journal of Applied Physics · 2005 · 123 citations

Engineering, Silicon Carbide, Defect Tolerance +16

Electrically active defects in irradiated 4H-SiC

Marie‐Laure David, Giovanni Alfieri, E. M. Monakhov et al. · Journal of Applied Physics · 2004 · 96 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto · Journal of Applied Physics · 2009 · 83 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +17