Marie‐Laure David

Electrically active defects in irradiated 4H-SiC

Marie‐Laure David, Giovanni Alfieri, E. M. Monakhov et al. · Journal of Applied Physics · 2004 · 96 citations

Natural Sciences, Materials Science, Physics +17

Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti₃C₂T_<i>x</i> MXenes

Hanna Pazniak, Mohamed Benchakar, Thomas Bilyk et al. · ACS Nano · 2021 · 80 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Effect of implant temperature on defects created using high fluence of helium in silicon

Marie‐Laure David, M. F. Beaufort, J. F. Barbot · Journal of Applied Physics · 2003 · 56 citations

Engineering, Materials Engineering, Materials Science +17

Formation of bubbles by high dose He implantation in 4H–SiC

Erwan Oliviero, Marie‐Laure David, M. F. Beaufort et al. · Journal of Applied Physics · 2002 · 41 citations

Engineering, Materials Engineering, Materials Science +17

<i>In situ</i> probing of helium desorption from individual nanobubbles under electron irradiation

Marie‐Laure David, F. Pailloux, Vincent Mauchamp et al. · Applied Physics Letters · 2011 · 39 citations

Natural Sciences, Materials Science, Physics +15