J. F. Barbot

Electrically active defects in irradiated 4H-SiC

Marie‐Laure David, Giovanni Alfieri, E. M. Monakhov et al. · Journal of Applied Physics · 2004 · 96 citations

Natural Sciences, Materials Science, Physics +17

Effect of implant temperature on defects created using high fluence of helium in silicon

Marie‐Laure David, M. F. Beaufort, J. F. Barbot · Journal of Applied Physics · 2003 · 56 citations

Engineering, Materials Engineering, Materials Science +17

Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation

Erwan Oliviero, M. F. Beaufort, J. F. Barbot et al. · Journal of Applied Physics · 2002 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +17

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro et al. · IEEE Transactions on Electron Devices · 2016 · 38 citations · Full text

Engineering, Materials Engineering, Materials Science +16

On the effects of implantation temperature in helium implanted silicon

Erwan Oliviero, Marie‐Laure David, M. F. Beaufort et al. · Applied Physics Letters · 2002 · 32 citations · Full text

Natural Sciences, Materials Science, Physics +11