On the effects of implantation temperature in helium implanted silicon

Abstract

He + ions were implanted into silicon with a fluence of 5×1016 cm−2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation temperature. However, it is found that helium release from cavities is governed by a single mechanism regardless of the implantation temperature.