Koutarou Kawahara - Concepedia

Author

Koutarou Kawahara

Kyoto University

Also Known As

Koutarou Kawahara

Publications

661

Citations

H-Index

Concepts

All Affiliations

Kyoto University Kyoto Katsura Hospital Mitsubishi Electric (Japan)Friedrich-Alexander-Universität Erlangen-Nürnberg Linköping University

About

Koutarou Kawahara is an author at Kyoto University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	14	625
2	Electrical Engineering	12	12	534
3	Applied Physics	11	11	509
4	Materials Science	9	9	466
5	Materials Engineering	7	7	250

Koutarou Kawahara

Publications

625

Citations

H-Index

Page 1

	Year	Citations
Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor DeviceSemiconductorsIon Implantation	2009	83
Analytical model for reduction of deep levels in SiC by thermal oxidation Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Journal of Applied Physics Materials ScienceElectrical EngineeringAr AnnealingEngineeringDeep Levels	2012	79
6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Electrical EngineeringEngineeringPower DeviceNanoelectronicsCompact Full-unipolar Module	2017	71
Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance Koutarou Kawahara, Xuan Thang Trinh, Nguyên Tiên Són, Applied Physics Letters Materials ScienceSemiconductorsSemiconductor TechnologySemiconductor DeviceEngineering	2013	68
Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Applied Physics Express EngineeringThermal OxidationOptoelectronic DevicesSemiconductor DeviceSemiconductor Nanostructures	2012	60
Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC Koutarou Kawahara, Xuan Thang Trinh, Nguyên Tiên Són, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringPoint DefectsEngineering	2014	49
Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC Koutarou Kawahara, Jun Suda, Gerhard Pensl, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringIon ImplantationDeep Levels	2010	45
Deep levels induced by reactive ion etching in n- and p-type 4H–SiC Koutarou Kawahara, M. Krieger, Jun Suda, Journal of Applied Physics EngineeringThermal OxidationReactive IonSemiconductor DeviceSemiconductors	2010	40
Superior Switching Characteristics of SiC-MOSFET Embedding SBD Takaaki Tominaga, Shiro Hino, Y. Mitsui, Electrical EngineeringSemiconductor DeviceEngineeringPower DeviceRecovery Charge	2019	30
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Materials science forum Sic MosfetElectrical EngineeringEngineeringKv Sic MosfetsHigh Voltage Engineering	2018	29

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