Koutarou Kawahara

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto · Journal of Applied Physics · 2009 · 83 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +17

Analytical model for reduction of deep levels in SiC by thermal oxidation

Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto · Journal of Applied Physics · 2012 · 79 citations

Materials Science, Electrical Engineering, Ar Annealing +11

6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu et al. · 2017 · 71 citations

Electrical Engineering, Engineering, Power Device +10

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Koutarou Kawahara, Xuan Thang Trinh, Nguyên Tiên Són et al. · Applied Physics Letters · 2013 · 68 citations

Materials Science, Semiconductors, Semiconductor Technology +11

Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

Shuhei Ichikawa, Koutarou Kawahara, Jun Suda et al. · Applied Physics Express · 2012 · 60 citations

Engineering, Thermal Oxidation, Optoelectronic Devices +17