Shuhei Ichikawa - Concepedia

Author

Shuhei Ichikawa

The University of Osaka ORCID

Also Known As

S Ichikawa, S. Ichikawa, S. Ichikawa, Seiichi Ichikawa, Seisuke Ichikawa, Shuhei ICHIKAWA, Shuhei Ichikawa

149

Publications

992

Citations

H-Index

Concepts

All Affiliations

The University of Osaka Kyoto University Mie University The University of Tokyo Panasonic (Japan)

About

Shuhei Ichikawa is an author at The University of Osaka specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	627
2	Applied Physics	15	22	627
3	Electrical Engineering	12	14	406
4	Natural Sciences	2	2	48
5	Chemistry	2	2	42

Shuhei Ichikawa

Publications

720

Citations

H-Index

Page 1

	Year	Citations
Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Journal of Applied Physics Aluminium NitridePhotonicsElectrical EngineeringPl Decay TimeEngineering	2015	83
Ferroelectric PVDF cladding terahertz waveguide T. Hidaka, Hiroaki Minamide, Hiromasa Ito, Journal of Lightwave Technology Materials ScienceHollow PvdfEngineeringFlexible ElectronicsOptical Properties	2005	74
Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Applied Physics Express EngineeringThermal OxidationOptoelectronic DevicesSemiconductor DeviceSemiconductor Nanostructures	2012	60
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut Shuhei Ichikawa, Keishi Shiomi, Takaya Morikawa, Applied Physics Express Optical MaterialsEngineeringWide Color GamutOptoelectronic DevicesLight-emitting Diodes	2021	60
High quality semipolar (11¯02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities Shuhei Ichikawa, Y. Iwata, Mitsuru Funato, Applied Physics Letters Algan/aln Quantum WellsAluminium NitrideOptical MaterialsEngineeringHigh Quality Semipolar	2014	39
Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters Hirotsugu Kobayashi, Shuhei Ichikawa, Mitsuru Funato, Advanced Optical Materials Materials ScienceGan Ml QwsElectrical EngineeringWide-bandgap SemiconductorEngineering	2019	34
Broad range thickness identification of hexagonal boron nitride by colors Yuto Anzai, Mahito Yamamoto, Shingo Genchi, Applied Physics Express Materials EngineeringMaterials ScienceAluminium NitrideBoron NitrideEngineering	2019	30
The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation Takashi Hirao, G. Fuse, Koji Inoue, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	1979	24
Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxy Naoya Miyashita, Shuhei Ichikawa, Yoshitaka Okada Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringNanotechnologyApplied Physics	2009	23
Nitride Semiconductors Hiroshi Fujioka, Hideto Miyake, Hideki Hirayama, physica status solidi (b)	2024	23

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