Jun Suda

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai, Masato Omori, Shinji Yamada et al. · Applied Physics Letters · 2019 · 168 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

Jun Suda, Kazuki Yamaji, Yuichirou Hayashi et al. · Applied Physics Express · 2010 · 144 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics

Naoki Kaji, Hiroki Niwa, Jun Suda et al. · IEEE Transactions on Electron Devices · 2014 · 132 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Tsunenobu Kimoto, Katsunori Danno, Jun Suda · physica status solidi (b) · 2008 · 127 citations

Engineering, Optoelectronic Devices, Carrier Lifetime +16

Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

Gan Feng, Jun Suda, Tsunenobu Kimoto · Applied Physics Letters · 2008 · 124 citations

Materials Science, Materials Engineering, Electrical Engineering +15