Katsunori Danno - Concepedia

Author

Katsunori Danno

Toyota Motor Corporation (Japan)ORCID

Also Known As

Danno, Katsunori, K. Danno, Katsunori Danno

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Toyota Motor Corporation (Japan)Kyoto University Kyoto Katsura Hospital Japan Fine Ceramics Center Toyota Central Research and Development Laboratories (Japan)

About

Katsunori Danno is an author at Toyota Motor Corporation (Japan) specializing in engineering, applied physics, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	24	1.2K
2	Applied Physics	18	23	1.2K
3	Natural Sciences	2	2	127
4	Chemistry	1	1	53
5	Data Science	1	1	24

Katsunori Danno

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation Katsunori Danno, Daisuke Nakamura, Tsunenobu Kimoto Applied Physics Letters Engineering4H-sic EpilayersCarrier LifetimeSemiconductor DeviceNanoelectronics	2007	217
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons Katsunori Danno, Tsunenobu Kimoto Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductor TechnologyNuclear CeramicDeep Levels	2006	162
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation Tsunenobu Kimoto, Katsunori Danno, Jun Suda physica status solidi (b) EngineeringOptoelectronic DevicesCarrier LifetimeLow‐energy Electron IrradiationSemiconductor Nanostructures	2008	127
Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers Katsunori Danno, Tsunenobu Kimoto Journal of Applied Physics Materials ScienceSemiconductor TechnologyIon ImplantationDeep LevelsEngineering	2007	101
Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy Katsunori Danno, Tsunenobu Kimoto, H. Matsunami Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2005	78
Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringFast Homoepitaxial GrowthApplied Physics	2007	67
Impacts of growth parameters on deep levels in n-type 4H-SiC Katsunori Danno, Tsutomu Hori, Tsunenobu Kimoto Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	2007	53
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt Katsunori Danno, Hiroaki Saitoh, Akinori Seki, Materials science forum EngineeringCrystal Growth TechnologyTypical Growth RateEpitaxial GrowthMaterials Science	2010	51
Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0 0 0 1) by vertical hot-wall chemical vapor deposition Hiroshi Fujiwara, Katsunori Danno, Tsunenobu Kimoto, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied PhysicsFast Epitaxial Growth	2005	43
Transmission Electron Microscopy Analysis of a Threading Dislocation with $c+a$ Burgers Vector in 4H-SiC Yoshihiro Sugawara, Michio Nakamori, Yongzhao Yao, Applied Physics Express Materials ScienceMaterials EngineeringIon ImplantationEngineeringSevere Plastic Deformation	2012	43

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