H. Matsunami

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Engineering, Deep Defect Centers, Defect Tolerance +17

Crystal Structures of the Copper-Containing Amine Oxidase from <i>Arthrobacter globiformis</i> in the Holo and Apo Forms:  Implications for the Biogenesis of Topaquinone^,

Matthew C. J. Wilce, David M. Dooley, Hans C. Freeman et al. · Biochemistry · 1997 · 251 citations

High performance of high-voltage 4H-SiC Schottky barrier diodes

Akira Itoh, Tsunenobu Kimoto, H. Matsunami · IEEE Electron Device Letters · 1995 · 238 citations

Electrical Engineering, Engineering, Power Device +8

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Tsunenobu Kimoto, N. Miyamoto, H. Matsunami · IEEE Transactions on Electron Devices · 1999 · 220 citations

Materials Engineering, Electrical Engineering, Engineering +11

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

Hiroshi Yano, T. Hirao, Tsunenobu Kimoto et al. · IEEE Electron Device Letters · 1999 · 211 citations

Semiconductor Technology, Electrical Engineering, 4H-sic Mosfets +13