T. Hirao

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

Hiroshi Yano, T. Hirao, Tsunenobu Kimoto et al. · IEEE Electron Device Letters · 1999 · 212 citations

Engineering, Electrical Engineering, Materials Science +13

A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (1120) face

Hiroshi Yano, T. Hirao, Tsunenobu Kimoto et al. · Applied Physics Letters · 2001 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon-gate n-well CMOS process by full ion-implantation technology

T. Ohzone, Haruya Shimura, K. Tsuji et al. · IEEE Transactions on Electron Devices · 1980 · 43 citations

Engineering, Computer Engineering, Electrical Engineering +17

Interface properties in metal-oxide-semiconductor structures on <i>n</i>-type 4H-SiC(0338)

Hiroshi Yano, T. Hirao, Tsunenobu Kimoto et al. · Applied Physics Letters · 2002 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Homoepitaxial growth of 4H–SiC(038) and nitrogen doping by chemical vapor deposition

Tsunenobu Kimoto, T. Hirao, S. Nakazawa et al. · Journal of Crystal Growth · 2003 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +16