T. Ohzone

Silicon-gate n-well CMOS process by full ion-implantation technology

T. Ohzone, Haruya Shimura, K. Tsuji et al. · IEEE Transactions on Electron Devices · 1980 · 43 citations

Engineering, Computer Engineering, Electrical Engineering +17

A practical trench isolation technology with a novel planarization process

G. Fuse, Hiroshi Ogawa, K. Tateiwa et al. · 1987 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

A new isolation method with boron-implanted sidewalls for controlling narrow-width effect

G. Fuse, Motoyuki Fukumoto, Akihiro Shinohara et al. · IEEE Transactions on Electron Devices · 1987 · 35 citations

Engineering, Electrical Engineering, Materials Science +13

Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices

H. Iwata, T. Ohzone · IEEE Transactions on Electron Devices · 1992 · 35 citations

Engineering, Electrical Engineering, Physics +16

The dynamics of latchup turn-on behavior in scaled CMOS

S. Odanaka, M. Wakabayashi, T. Ohzone · IEEE Transactions on Electron Devices · 1985 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +15