T. Dalibor

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Engineering, Deep Defect Centers, Defect Tolerance +17

Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

Tsunenobu Kimoto, Akira Itoh, H. Matsunami et al. · Applied Physics Letters · 1995 · 118 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16

Electrical properties of the titanium acceptor in silicon carbide

T. Dalibor, Gerhard Pensl, N. Nordell et al. · Physical review. B, Condensed matter · 1997 · 94 citations

Engineering, Titanium Acceptor, Semiconductor Device +16

Radiation-induced defect centers in 4H silicon carbide

T. Dalibor, Gerhard Pensl, Tsunenobu Kimoto et al. · Diamond and Related Materials · 1997 · 62 citations

Engineering, Radiation-induced Defect Centers, Applied Physics +3

Oxygen in silicon carbide: shallow donors and deep acceptors

T. Dalibor, Hubert Trageser, Gerhard Pensl et al. · Materials Science and Engineering B · 1999 · 20 citations

Chemical Engineering, Engineering, Oxidation Resistance +3