Gan Feng

Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

Gan Feng, Jun Suda, Tsunenobu Kimoto · Applied Physics Letters · 2008 · 130 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

Gan Feng, Jun Suda, Tsunenobu Kimoto Tsunenobu Kimoto · IEEE Transactions on Electron Devices · 2011 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Triple Shockley type stacking faults in 4H-SiC epilayers

Gan Feng, Jun Suda, Tsunenobu Kimoto · Applied Physics Letters · 2009 · 81 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Characterization of major in-grown stacking faults in 4H-SiC epilayers

Gan Feng, Jun Suda, Tsunenobu Kimoto · Physica B Condensed Matter · 2009 · 71 citations

Engineering, Materials Engineering, Materials Science +11

Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

Hiroki Niwa, Gan Feng, Jun Suda et al. · IEEE Transactions on Electron Devices · 2012 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +16