Tsunenobu Kimoto Tsunenobu Kimoto

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans et al. · IEEE Transactions on Power Electronics · 2007 · 329 citations

Engineering, Power Conversion, Energy Efficiency +16

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

Gan Feng, Jun Suda, Tsunenobu Kimoto Tsunenobu Kimoto · IEEE Transactions on Electron Devices · 2011 · 105 citations

Electrical Engineering, Engineering, Power Device +11

Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

Toru Hiyoshi, Tsutomu Hori, Jun Suda et al. · IEEE Transactions on Electron Devices · 2008 · 87 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

Hiroki Niwa, Gan Feng, Jun Suda et al. · IEEE Transactions on Electron Devices · 2012 · 44 citations

Ultrahigh Voltage, Electrical Engineering, Ion Implantation +12

High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

Hiroshi Yano, Taichi Hirao Taichi Hirao, Tsunenobu Kimoto Tsunenobu Kimoto et al. · Japanese Journal of Applied Physics · 2000 · 35 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +14