Toru Hiyoshi

Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Toru Hiyoshi, Tsunenobu Kimoto · Applied Physics Express · 2009 · 205 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

Toru Hiyoshi, Tsunenobu Kimoto · Applied Physics Express · 2009 · 140 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

Toru Hiyoshi, Tsutomu Hori, Jun Suda et al. · IEEE Transactions on Electron Devices · 2008 · 87 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers

Tsunenobu Kimoto, Toru Hiyoshi, Toshihiko Hayashi et al. · Journal of Applied Physics · 2010 · 75 citations

Materials Science, Semiconductors, Semiconductor Technology +11

Novel Designed SiC Devices for High Power and High Efficiency Systems

Yasuki Mikamura, Kenji Hiratsuka, Takashi Tsuno et al. · IEEE Transactions on Electron Devices · 2014 · 74 citations

Semiconductor Technology, Low Channel Resistance, Electrical Engineering +13