G. Holmén - Concepedia

Author

G. Holmén

Chalmers University of Technology

Also Known As

G Holmén, G. Holmen, G. HolmÉn, G. Holmén, Gillis Holmén

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Chalmers University of Technology

About

G. Holmén is an author at Chalmers University of Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	898
2	Applied Physics	15	23	898
3	Natural Sciences	2	2	75
4	Chemical Engineering	1	1	33
5	Chemistry	1	1	60

G. Holmén

Publications

940

Citations

H-Index

Page 1

	Year	Citations
Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire Jan Linnros, B. G. Svensson, G. Holmén Physical review. B, Condensed matter Materials EngineeringIon ImplantationEngineeringCrystalline DefectsPhysics	1984	144
Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition Jan Linnros, G. Holmén, B. G. Svensson Physical review. B, Condensed matter Point DefectsEngineeringIon Beam InstrumentationSilicon On InsulatorInitial Regrowth Rate	1985	123
Electron emission from ion-bombarded aluminum B. G. Svensson, G. Holmén Journal of Applied Physics Materials ScienceIon ImplantationSecondary-electron YieldEngineeringPhysics	1981	77
Direct and recoil-induced electron emission from ion-bombarded solids G. Holmén, B. G. Svensson, Jørgen Schou, Physical review. B, Condensed matter Electrical EngineeringEngineeringPhysicsElectron SpectroscopyKinetic Emission	1979	65
Angular dependence of the ion-induced secondary-electron yield from solids B. G. Svensson, G. Holmén, A. L. Van Buren Physical review. B, Condensed matter Secondary-electron YieldEngineeringPhysicsIon-induced Secondary-electron YieldNatural Sciences	1981	60
Dose rate dependence and time constant of the ion-beam-induced crystallization mechanism in silicon Jan Linnros, G. Holmén Journal of Applied Physics Materials ScienceTime ConstantPlanar GrowthDose Rate DependenceEngineering	1987	48
Radiation enhanced annealing of radiation damage in Ge G. Holmén, S. Peterström, A. L. Van Buren, Radiation Effects Materials ScienceIon ImplantationEngineeringPhysicsCrystalline Defects	1975	45
Ion induced electron emission from polycrystalline copper G. Holmén, B. G. Svensson, A. L. Van Buren Nuclear Instruments and Methods in Physics Research Materials ScienceElectron SpectroscopyElectron EmissionIon EmissionElemental Metal	1981	42
Ion-beam induced annealing of radiation damage in silicon on sapphire B. G. Svensson, Jan Linnros, G. Holmén Nuclear Instruments and Methods in Physics Research Ion ImplantationEngineeringCrystalline DefectsPhysicsApplied Physics	1983	38
Channeling dependence of ion-beam-induced epitaxial recrystallization in silicon Jan Linnros, G. Holmén Journal of Applied Physics Materials ScienceIon ImplantationEngineeringCrystalline DefectsApplied Physics	1986	36

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