Roberta Nipoti

Titanium silicide formation: Effect of oxygen distribution in the metal film

M. Berti, A. V. Drigo, C. M. S. Cohen et al. · Journal of Applied Physics · 1984 · 102 citations

Engineering, Oxidation Resistance, Solid-state Chemistry +17

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions

F. Moscatelli, A. Scorzoni, Antonella Poggi et al. · IEEE Transactions on Nuclear Science · 2006 · 76 citations

Minimum Ionizing Particle, Electrical Engineering, Ion Implantation +13

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

Hussein M. Ayedh, Roberta Nipoti, Anders Hallén et al. · Applied Physics Letters · 2015 · 72 citations

Engineering, Thermodynamic Equilibrium Conditions, Integrated Circuits +16

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Hussein M. Ayedh, Viktor Bobal, Roberta Nipoti et al. · Journal of Applied Physics · 2014 · 66 citations · Full text

Materials Engineering, Semiconductors, Materials Science +14

Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals

G. G. Bentini, Roberta Nipoti, A. Armigliato et al. · Journal of Applied Physics · 1985 · 64 citations

Engineering, Integrated Circuits, Annealing Time +18