Effects of Implementing the Simple Biosphere Model in a General Circulation Model

N. Sato, P. J. Sellers, David A. Randall, +5

Journal of the Atmospheric Sciences

Pentagon adjacency as a determinant of fullerene stability

E. Albertazzi, Cármen Domene, Patrick W. Fowler, +4

Physical Chemistry Chemical Physics

Chemical ThermodynamicsEngineeringNatural SciencesApplied PhysicsPentagon Adjacency +10

Ion implantation induced swelling in 6H-SiC

Roberta Nipoti, E. Albertazzi, M. Bianconi, +4

Applied Physics Letters

Materials EngineeringMaterials ScienceIon ImplantationVolume ExpansionEngineering +8

Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

E. Albertazzi, M. Bianconi, G. Lulli, +2

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Electrical EngineeringDamage MechanismEngineeringPhysicsNatural Sciences +9

Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra

G. Lulli, E. Albertazzi, M. Bianconi, +3

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Crystalline SiEngineeringCrystalline DefectsPhysicsApplied Physics +4

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

G. Lulli, E. Albertazzi, M. Bianconi, +4

Journal of Applied Physics

EngineeringNuclear PhysicsRadiation Materials ScienceSilicon On InsulatorDefect Tolerance +23

Low-energy recoils in crystalline silicon: Quantum simulations

Massimiliano Mazzarolo, Luciano Colombo, G. Lulli, +1

Physical review. B, Condensed matter

Quantum ScienceCrystalline SiliconEngineeringPhysicsCrystalline Defects +11

Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation

S. Balboni, E. Albertazzi, M. Bianconi, +1

Physical review. B, Condensed matter

Point DefectsEngineeringPoint Defect TypeSilicon On InsulatorDefect Tolerance +15

Monte Carlo simulation of ion implantation in crystalline SiC

E. Albertazzi, G. Lulli

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Ion ImplantationEngineeringApplied PhysicsMicroelectronicsCrystalline Sic +1

Channeling characterization of defects in silicon: an atomistic approach

M. Bianconi, E. Albertazzi, S. Balboni, +3

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Atomistic ApproachEngineeringPhysicsNanoelectronicsApplied Physics +4