D. Gogova

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>-gallium oxide single crystals

M. Schubert, Rafał Korlacki, Sean Knight et al. · Physical review. B./Physical review. B · 2016 · 206 citations · Full text

Homoepitaxial growth of β‐Ga₂O₃ layers by metal‐organic vapor phase epitaxy

Guenter Wagner, M. Baldini, D. Gogova et al. · physica status solidi (a) · 2013 · 204 citations

Materials Science, Oxide Heterostructures, Materials Engineering +14

Electrical compensation by Ga vacancies in Ga2O3 thin films

E. Korhonen, Filip Tuomisto, D. Gogova et al. · Applied Physics Letters · 2015 · 191 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini et al. · Journal of Crystal Growth · 2013 · 167 citations

Materials Engineering, Oxide Heterostructures, Materials Science +5

Epitaxial stabilization of pseudomorphic α-Ga₂O₃on sapphire (0001)

Robert Schewski, G. Wagner, M. Baldini et al. · Applied Physics Express · 2014 · 139 citations

Materials Science, Oxide Heterostructures, Epitaxial Stabilization +14