Concepedia

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, Robert Schewski, Zbigniew Galazka, M. Albrecht, R. Fornari

Journal of Crystal Growth · 2013 · 170 citations · 10 references

DOI

Concepts

References

10

Oxygen vacancies and donor impurities in β-Ga2O3

Joel B. Varley, J. R. Weber, Anderson Janotti et al. · Applied Physics Letters · 2010 · 1K citations

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Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method

K. Irmscher, Zbigniew Galazka, Mike Pietsch et al. · Journal of Applied Physics · 2011 · 559 citations

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Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

Encarnación G. Vı́llora, Kiyoshi Shimamura, Yukio Yoshikawa et al. · Applied Physics Letters · 2008 · 442 citations

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Si-Ion Implantation Doping in β-Ga<sub>2</sub>O<sub>3</sub>and Its Application to Fabrication of Low-Resistance Ohmic Contacts

Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata et al. · Applied Physics Express · 2013 · 328 citations

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Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy

Charles M. Brooks, Lena F. Kourkoutis, T. Heeg et al. · Applied Physics Letters · 2009 · 230 citations

, , +16