Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE - Concepedia

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Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

167

Citations

10

References

2013

Year

D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, Robert Schewski, Zbigniew Galazka, M. Albrecht, R. Fornari

Journal of Crystal Growth

Materials EngineeringOxide HeterostructuresMaterials ScienceEngineeringOxide ElectronicsApplied PhysicsGallium OxideSi-doped β-Ga2o3 Layers

References

	Year	Citations

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