R. Fornari - Concepedia

Author

R. Fornari

Leibniz Institute for Crystal Growth ORCID

Also Known As

Fornari, R., Fornari, Roberto, R FORNARI, R Fornari, R. Fornari, R.E. Fornari, Robert Fornari, Roberto FORNARİ, Roberto Fornari

284

Publications

7.2K

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for Crystal Growth University of Parma Institute of Materials for Electronics and Magnetism Humboldt-Universität zu Berlin Institute for Technical Physics and Materials Science

About

R. Fornari is an author at Leibniz Institute for Crystal Growth specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	37	105	6.1K
2	Applied Physics	37	97	5.9K
3	Natural Sciences	12	12	529
4	Health Sciences	2	2	56
5	Biomolecular Engineering	1	1	138

R. Fornari

120

Publications

6.7K

Citations

H-Index

Page 1

	Year	Citations
Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method K. Irmscher, Zbigniew Galazka, Mike Pietsch, Journal of Applied Physics Materials ScienceCarbon DioxideEngineeringPhysicsCrystal Material	2011	543
Czochralski growth and characterization of β‐Ga<sub>2</sub>O<sub>3</sub> single crystals Zbigniew Galazka, R. Uecker, K. Irmscher, Crystal Research and Technology Optical MaterialsEngineeringCrystal Growth TechnologySolid-state ChemistryChemistry	2010	449
Schottky barrier height of Au on the transparent semiconducting oxide <i>β</i>-Ga2O3 Mansour Mohamed, K. Irmscher, C. Janowitz, Applied Physics Letters Oxide HeterostructuresMaterials ScienceSurface CharacterizationSchottky Barrier HeightEngineering	2012	350
The real structure of ε-Ga<sub>2</sub>O<sub>3</sub> and its relation to κ-phase Ildikó Cora, Francesco Mezzadri, Francesco Boschi, CrystEngComm Crystal StructureEngineeringPna21 Space GroupStatistical Field TheoryQuantum Materials	2017	347
Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub> C. Janowitz, V. Scherer, Mansour Mohamed, New Journal of Physics Optical MaterialsEngineeringElectronic StructureOptical PropertiesQuantum Materials	2011	346
Crystal Structure and Ferroelectric Properties of ε-Ga<sub>2</sub>O<sub>3</sub> Films Grown on (0001)-Sapphire Francesco Mezzadri, G. Calestani, Francesco Boschi, Inorganic Chemistry	2016	247
Homoepitaxial growth of β‐Ga<sub>2</sub>O<sub>3</sub> layers by metal‐organic vapor phase epitaxy Guenter Wagner, M. Baldini, D. Gogova, physica status solidi (a) Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringO 3	2013	204
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD Francesco Boschi, Matteo Bosi, Tatiana Berzina, Journal of Crystal Growth Oxide HeterostructuresMaterials EngineeringMaterials ScienceEngineeringApplied Physics	2016	192
The electronic structure of β-Ga2O3 Mansour Mohamed, C. Janowitz, I. Unger, Applied Physics Letters SemiconductorsOxide HeterostructuresEngineeringPhysicsExperimental Band Structure	2010	184
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D. Gogova, G. Wagner, M. Baldini, Journal of Crystal Growth Materials EngineeringOxide HeterostructuresMaterials ScienceEngineeringOxide Electronics	2013	167

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