M. Schmidbauer

X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures

Vladimir M. Kaganer, R. Köhler, M. Schmidbauer et al. · Physical review. B, Condensed matter · 1997 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +15

Homoepitaxial growth of β‐Ga₂O₃ layers by metal‐organic vapor phase epitaxy

Guenter Wagner, M. Baldini, D. Gogova et al. · physica status solidi (a) · 2013 · 208 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini et al. · Journal of Crystal Growth · 2013 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +11

Homo- and heteroepitaxial growth of Sn-doped β-Ga₂O₃ layers by MOVPE

D. Gogova, M. Schmidbauer, Albert Kwasniewski · CrystEngComm · 2015 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +14

Step-flow growth in homoepitaxy of <b>β</b>-Ga2O3 (100)—The influence of the miscut direction and faceting

Robert Schewski, Konstantin Lion, Andreas Fiedler et al. · APL Materials · 2018 · 130 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17