Concepedia

Robert Schewski

RS

31

Publications

3.5K

Citations

27

H-Index

2013

Active since

Affiliations

Leibniz Institute for Crystal Growth(Current)

Paul Drude Institute for Solid State Electronics

Institute of Physics

Nicolaus Copernicus University

Humboldt-Universität zu Berlin

Robert Schewski is an author at Leibniz Institute for Crystal Growth specializing in engineering, materials science, and applied physics.

Top concepts

EngineeringApplied PhysicsMaterial ScienceOxide HeterostructuresSurface ScienceThin FilmsCondensed Matter PhysicsCrystallographyCrystalline DefectsPhysics

Publications per year

2013–2021

31

Publications

31

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Zbigniew Galazka, K. Irmscher, Reinhard Uecker et al. · Journal of Crystal Growth · 2014 · 628 citations

Materials Science, Materials Engineering, Engineering +8

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub>Layers Grown by MOVPE on (010)-Oriented Substrates

M. Baldini, M. Albrecht, Andreas Fiedler et al. · ECS Journal of Solid State Science and Technology · 2016 · 273 citations · Full text

Semiconductors, Materials Science, Oxide Heterostructures +13

Homoepitaxial growth of β‐Ga<sub>2</sub>O<sub>3</sub> layers by metal‐organic vapor phase epitaxy

Guenter Wagner, M. Baldini, D. Gogova et al. · physica status solidi (a) · 2013 · 204 citations

Materials Science, Oxide Heterostructures, Materials Engineering +14

Electrical compensation by Ga vacancies in Ga2O3 thin films

E. Korhonen, Filip Tuomisto, D. Gogova et al. · Applied Physics Letters · 2015 · 191 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini et al. · Journal of Crystal Growth · 2013 · 167 citations

Materials Engineering, Oxide Heterostructures, Materials Science +5

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