Concepedia

Robert Schewski

RS

Statistics

Publications

33

Citations

3.6K

H-Index

27

Active since

2013

Affiliations

Leibniz Institute for Crystal Growth(Current)

Institute of Physics

Nicolaus Copernicus University

Paul Drude Institute for Solid State Electronics

Humboldt-Universität zu Berlin

Robert Schewski is an author at Leibniz Institute for Crystal Growth specializing in materials science, natural sciences, and materials engineering.

Publications per year

2013–2022

33

Publications

33

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Zbigniew Galazka, K. Irmscher, Reinhard Uecker et al. · Journal of Crystal Growth · 2014 · 653 citations

Natural Sciences, Materials Engineering, Materials Science +14

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub>Layers Grown by MOVPE on (010)-Oriented Substrates

M. Baldini, M. Albrecht, Andreas Fiedler et al. · ECS Journal of Solid State Science and Technology · 2016 · 289 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Homoepitaxial growth of β‐Ga<sub>2</sub>O<sub>3</sub> layers by metal‐organic vapor phase epitaxy

Guenter Wagner, M. Baldini, D. Gogova et al. · physica status solidi (a) · 2013 · 208 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical compensation by Ga vacancies in Ga2O3 thin films

E. Korhonen, Filip Tuomisto, D. Gogova et al. · Applied Physics Letters · 2015 · 200 citations · Full text

Natural Sciences, Materials Science, Physics +17

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini et al. · Journal of Crystal Growth · 2013 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +11

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