G. Wagner

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Publications

Citations

214

H-Index

Active since

1989

Affiliations

Leibniz Institute for Crystal Growth(Current)

G. Wagner is an author at Leibniz Institute for Crystal Growth specializing in materials science, materials engineering, and semiconductor device materials.

Publications per year

1989–2013

Publications

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

D. Gogova, G. Wagner, M. Baldini et al. · Journal of Crystal Growth · 2013 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +11

Observation of a two-dimensional hole gas in boron-doped Si0.5Ge0.5/Ge heterostructures

G. Wagner, M. A. Janocko · Applied Physics Letters · 1989 · 18 citations

Natural Sciences, Materials Science, Physics +17

Luminescence from Erbium‐Doped Silicon Epi Layers Grown by Liquid‐Phase Epitaxy

S. Pizzini, Matteo Donghi, S. Binetti et al. · Journal of The Electrochemical Society · 1998 · 16 citations

Engineering, Materials Engineering, Materials Science +17

Spectroscopic ellipsometry studies on the optical constants of Bi4Ti3O12:xNa thin films grown by metal-organic chemical vapor deposition

Saud Bin Anooz, Jutta Schwarzkopf, R. Dirsyte et al. · Thin Solid Films · 2011 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +16

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