V. Ranki

Evidence of the Zn Vacancy Acting as the Dominant Acceptor in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type ZnO

Filip Tuomisto, V. Ranki, K. Saarinen et al. · Physical Review Letters · 2003 · 457 citations · Full text

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, Jani Kivioja et al. · Physical review. B, Condensed matter · 2001 · 114 citations

Materials Engineering, Wide-bandgap Semiconductor, Epitaxial Growth +13

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Filip Tuomisto, V. Ranki, D. C. Look et al. · Physical Review B · 2007 · 85 citations · Full text

Wide-bandgap Semiconductor, Electron-irradiated Gan, Point Defects +14

Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

V. Ranki, J. Nissilä, K. Saarinen · Physical Review Letters · 2002 · 57 citations