J. Oila

Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo et al. · Physical Review Letters · 2003 · 134 citations

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, Jani Kivioja et al. · Physical review. B, Condensed matter · 2001 · 114 citations

Materials Engineering, Wide-bandgap Semiconductor, Epitaxial Growth +13

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen, Petri Seppälä, J. Oila et al. · Applied Physics Letters · 1998 · 103 citations

Wide-bandgap Semiconductor, Engineering, Positron Annihilation Spectroscopy +16

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Materials Science, Ga/si Interdiffusion, Electrical Engineering +15