Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo, +4

Physical Review Letters

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki, +6

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNuclear PhysicsPhysics +11

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, Jani Kivioja, +8

Physical review. B, Condensed matter

Materials EngineeringWide-bandgap SemiconductorEpitaxial GrowthEngineeringPhysics +11

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen, Petri Seppälä, J. Oila, +4

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringPositron Annihilation SpectroscopyChemistryGrowth Stoichiometry +14

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak, +13

Physical review. B, Condensed matter

Materials ScienceGa/si InterdiffusionElectrical EngineeringWide-bandgap SemiconductorMolecular-beam Epitaxy +13

Observation of defect complexes containing Ga vacancies in GaAsN

Juha Toivonen, Timo Hakkarainen, M. Sopanen, +3

Applied Physics Letters

SemiconductorsGaasn/gaas EpilayersEngineeringCrystalline DefectsPhysics +9

Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

J. Oila, A. Kemppinen, A. Laakso, +6

Applied Physics Letters

Aluminium NitrideInn LayersEngineeringVacuum DeviceSemiconductor Nanostructures +16

Magnetic resonance imaging ( <scp>MRI</scp> )‐guided transurethral ultrasound therapy of the prostate: a preclinical study with radiological and pathological correlation using customised <scp>MRI</scp> ‐based moulds

Ari Partanen, Nitin Yerram, Hari Trivedi, +15

British Journal of Urology

Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

K. Saarinen, J. Nissilä, J. Oila, +9

Physica B Condensed Matter

Wide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsCondensed Matter Physics +5

Ga vacancies and grain boundaries in GaN

J. Oila, K. Saarinen, A. E. Wickenden, +3

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyEngineeringCrystalline Defects +10