J. Oila

Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo et al. · Physical Review Letters · 2003 · 136 citations

Natural Sciences, Materials Science, Physics +17

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 128 citations

Engineering, Materials Science, Physics +17

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, Jani Kivioja et al. · Physical review. B, Condensed matter · 2001 · 115 citations

Engineering, Materials Engineering, Materials Science +17

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen, Petri Seppälä, J. Oila et al. · Applied Physics Letters · 1998 · 104 citations

Natural Sciences, Materials Science, Physics +12

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Engineering, Materials Science, Physics +17