E. Calleja

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Physical review. B, Condensed matter · 2000 · 361 citations

Engineering, Materials Engineering, Materials Science +17

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 318 citations

Engineering, Materials Engineering, Materials Science +16

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E. Monroy, E. Muñoz, F.J. Sánchez et al. · Semiconductor Science and Technology · 1998 · 223 citations

Engineering, Electrical Engineering, Materials Science +17

Yellow luminescence and related deep states in undoped GaN

E. Calleja, F.J. Sánchez, Durga Basak et al. · Physical review. B, Condensed matter · 1997 · 213 citations

Natural Sciences, Materials Engineering, Materials Science +16

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Journal of Crystal Growth · 1999 · 196 citations

Engineering, Materials Engineering, Materials Science +14