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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Materials ScienceAluminium NitrideElectrical EngineeringEngineeringSurface ScienceApplied PhysicsSubstrate TemperatureAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorIii/v Ratio